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PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
Description
The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
Output Power (Watts)
16 12 8 4 0 0 1 2 3 4
200 82
LOT COD E
VCC = 26 V ICQ = 70 mA f = 2.0 GHz
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 1.4 52 0.29 -40 to +150 3.4
Unit
Vdc Vdc Vdc Adc Watts W/C C C/W
1 9/28/98
PTB 20082
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
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Conditions
IB = 0 A, IC = 5 mA, RBE = 22 VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA
Symbol
V(BR)CER V(BR)CES V(BR)EBO hFE
Min
50 50 4 20
Typ
-- -- 5 --
Max
-- -- -- --
Units
Volts Volts Volts --
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Output Power at 1 dB Compression (VCC = 26 Vdc, ICQ = 70 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz--all phase angles at frequency of test)
Symbol
Gpe P-1dB C
Min
8 15 30 --
Typ
9 -- -- --
Max
-- -- -- 5:1
Units
dB Watts % --
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
10 9 8
Broadband Test Fixture Performance
20 60 50 Efficiency (%) 40 30 Gain (dB) 8 -25 10 4 1900 Return Loss (dB) 1925 1950 1975 -35 0 2000 -15 20
Output Power & Efficiency
Gain (dB)
60 50 40
16
ICQ = 70 mA POUT = 7.5 W
Gain
VCC = 26 V
7 6 5 1750
Efficiency (%) 30 Output Power (W) 20
Gain
12
1800
1850
1900
1950
2000
10 2050
Frequency (MHz)
Frequency (MHz)
2
5/11/98
Return Loss
ICQ = 70 mA
Efficiency
VCC = 26 V
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Output Power vs. Supply Voltage
20 -20 -30
PTB 20082
Intermodulation Distortion vs. Output Power
Output Power (Watts)
18 16 14 12 10 22 23 24 25 26 27
IMD (dBc)
-40 -50 -60 -70 1 3 5 7 9 11 13 15
VCC = 28 V ICQ = 40 mA f1 = 1999.9 MHz f2 = 2000.0 MHz
ICQ = 70 mA f = 2.0 GHz
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
10 9
Power Gain (dB)
ICQ = 70 mA ICQ = 35 mA
8 7 6
ICQ = 18 mA
5 0.1 1.0 10.0
VCC = 26 V f = 2.0 GHz
100.0
Output Power (Watts)
Impedance Data
VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA
Z Source Z Load
Z0 = 50
Frequency
GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R 5.8 5.8 5.8 5.8 6.0 7.1 7.7
Z Source
jX -12.7 -11.9 -11.4 -10.2 -8.8 -5.9 -4.9 R 9.29 10.15 9.80 9.58 8.83 8.23 8.79
Z Load
jX -0.6 -0.9 -1.3 -1.5 -1.5 -1.3 -0.7 3
5/6/98
PTB 20082
Typical Scattering Parameters
(VCE = 26 V, IC = 0.5 A)
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S11 S21 Ang
-176 -176 -176 -178 -179 180 178 177 176 175 173 172 170 168 165 163 160 163 173 -178 -178 -180
f (MHz)
100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200
S12 Ang
82 75 40 22 19 145 149 142 134 125 116 107 98 87 75 59 39 12 -17 -46 -69 -85
S22 Ang
-24 -27 -29 31 78 84 81 76 72 66 60 54 50 44 35 24 7 -18 -45 -69 -91 -114
Mag
0.855 0.879 0.931 0.961 0.977 0.984 0.989 0.992 0.998 0.998 0.997 0.991 0.987 0.974 0.950 0.905 0.824 0.708 0.659 0.731 0.827 0.889
Mag
4.80 3.55 1.36 0.558 0.157 0.103 0.263 0.380 0.476 0.563 0.650 0.740 0.847 0.978 1.15 1.39 1.67 1.86 1.83 1.57 1.22 0.919
Mag
0.008 0.007 0.003 0.002 0.004 0.006 0.009 0.012 0.015 0.018 0.021 0.023 0.026 0.030 0.035 0.041 0.047 0.050 0.044 0.033 0.023 0.016
Mag
0.776 0.821 0.911 0.962 0.985 1.00 0.998 0.962 0.931 0.896 0.868 0.833 0.791 0.738 0.674 0.594 0.523 0.552 0.702 0.839 0.892 0.894
Ang
-172 -172 -174 -177 180 177 173 170 168 166 165 164 162 161 161 164 173 -172 -167 -171 -178 178
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L1 (c) Ericsson Inc. Components AB 1995 EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98
4

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